Estimation of electron traps in carbon-60 field-effect transistors by a thermally stimulated current technique
Estimation of electron traps in carbon-60 field-effect transistors by a thermally stimulated current technique
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DOI：
10.1063/1.2779240
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发表时间：
2007-09-03
影响因子：
4
通讯作者：
Adachi, Chihaya
中科院分区：
文献类型：
--
作者：
Matsushima, Toshinori;Yahiro, Masayuki;Adachi, Chihaya
研究了吸附在C-60（C60）薄膜中的O-2和H2O分子对其电子陷阱和n型场效应晶体管（FET）特性的影响。C60薄膜中的电子陷阱直接测量使用热刺激电流（TSC）技术。TSC结果表明，O-2和H2O分子在C60薄膜中的吸收引起电子陷阱浓度的增加，这降低了C60 FET的特性。通过在100 ℃下退火C60膜8小时，电子陷阱浓度显著降低，增强了C60 FET特性。从脱气的C60 FET观察到0.017 cm（2）/Vs的电子迁移率和10（6）的电流开/关比。(C)2007年，美国物理学会。
The authors investigated the influence of O-2 and H2O molecules absorbed in carbon-60 (C60) films on their electron trap and n-type field-effect transistor (FET) characteristics. Electron traps in the C60 films were directly measured using a thermally stimulated current (TSC) technique. The TSC results demonstrate that the absorption of O-2 and H2O molecules in the C60 films induced an increase in the electron trap concentration, which degrades C60 FET characteristics. By annealing the C60 films at 100 degrees C for 8 h, the electron trap concentrations were markedly lowered, enhancing the C60 FET characteristics. An electron mobility of 0.017 cm(2)/V s and a current on/off ratio of 10(6) were observed from the degassed C60 FETs. (C) 2007 American Institute of Physics.