Influence of misfit dislocations on thermal quenching of luminescence in InxGa1−xAs/GaAs multiple quantum wells
Influence of misfit dislocations on thermal quenching of luminescence in InxGa1−xAs/GaAs multiple quantum wells
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DOI：
10.1063/1.360491
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发表时间：
1995-12
影响因子：
3.2
通讯作者：
K. Rammohan;H. Lin;D. Rich;A. Larsson
中科院分区：
文献类型：
--
作者：
K. Rammohan;H. Lin;D. Rich;A. Larsson
The temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius‐type dependence on temperature (T), characterized by two different activation energies. The influence of misfit dislocations and point defects associated with strain relaxation on the thermal quenching of luminescence has been investigated, and the spatial variation in the activation energies has been examined. The CL intensity dependence on temperature for T≲150 K is controlled by thermally activated nonradiative recombination. For T≳150 K the decrease in CL intensity is largely influenced by thermal re‐emission of carriers out of the quantum wells.
