Fabrication of ZnO/Cu2O heterojunctions in atmospheric conditions: Improved interface quality and solar cell performance
Fabrication of ZnO/Cu2O heterojunctions in atmospheric conditions: Improved interface quality and solar cell performance
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DOI：
10.1016/j.solmat.2014.09.018
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发表时间：
2015-04-01
影响因子：
6.9
通讯作者：
MacManus-Driscoll, J. L.
中科院分区：
文献类型：
--
作者：
Ievskaya, Y.;Hoye, R. L. Z.;MacManus-Driscoll, J. L.
通过大气原子层沉积法在热氧化的氧化亚铜上成功制备了Zn 1-xMgxO/Cu 2 O异质结。采用这些异质结的太阳能电池表现出超过2.2%的功率转换效率和0.65 V的开路电压。在Zr 1-xMgxO沉积之前和期间，Cu 2 O到CuO的表面氧化被确定为获得高质量异质结界面的限制因素。优化沉积条件，以尽量减少CuO表面氧化导致改善的设备性能，三倍的开路电压和短路电流密度的两倍。这些值是在空气中形成的ZnO/Cu 2 O界面的最高报告，并强调大气ALD作为一种有前途的技术，廉价和可扩展的ZnO/Cu 2 O异质结的制造。(C)2014作者由爱思唯尔公司出版
Zn1-xMgxO/Cu2O heterojunctions were successfully fabricated in open-air at low temperatures via atmospheric atomic layer deposition of Zn1-xMgxO on thermally oxidized cuprous oxide. Solar cells employing these heterojunctions demonstrated a power conversion efficiency exceeding 2.2% and an open-circuit voltage of 0.65 V. Surface oxidation of Cu2O to CuO prior to and during Zr1-xMgxO deposition was identified as the limiting factor to obtaining a high quality heterojunction interface. Optimization of deposition conditions to minimize Cu2O surface oxidation led to improved device performance, tripling the open-circuit voltage and doubling the short-circuit current density. These values are the highest reported for a ZnO/Cu2O interface formed in air, and highlight atmospheric ALD as a promising technique for inexpensive and scalable fabrication of ZnO/Cu2O heterojunctions. (C) 2014 The Authors. Published by Elsevier B.V.