Enhanced field emission of ZnO nanowires
Enhanced field emission of ZnO nanowires
复制标题
DOI：
10.1002/adma.200400629
复制
发表时间：
2004-11-18
影响因子：
29.4
通讯作者：
Ren, ZF
中科院分区：
文献类型：
--
作者：
Banerjee, D;Jo, SH;Ren, ZF
测量了碳布上生长的氧化锌纳米线的增强场发射（见图）。这些发射器在约0.7 V mum(-1) 电压下产生1 mA cm(-2) 的场发射电流密度，对应于4.11 x 10(4) 的极高场增强系数。如此极高的场增强因子被认为是ZnO纳米线的高纵横比和碳布基底的几何形状的综合效应。
Enhanced field emission from ZnO nanowires grown on carbon cloth (see Figure) has been measured. These emitters produced a field emission current density of 1 mA cm(-2) at about 0.7 V mum(-1) corresponding to an exceptionally high field-enhancement factor of 4.11 x 10(4). Such an extremely high field-enhancement factor is believed to be the combined effect of the high aspect ratio of ZnO nanowires and the geometry of the carbon-cloth substrate.