Crystallographic effect on subsurface damage formation in silicon microcutting
Crystallographic effect on subsurface damage formation in silicon microcutting
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DOI：
10.1016/j.cirp.2012.03.070
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发表时间：
2012-01-01
影响因子：
4.1
通讯作者：
Kuriyagawa, Tsunemoto
中科院分区：
文献类型：
--
作者：
Yan, Jiwang;Asami, Tooru;Kuriyagawa, Tsunemoto
对单晶硅（0 0 1）试样进行了不同刀具前角下沿着不同方向的纳米级精密插削试验，并利用截面透射电镜和激光显微拉曼光谱对亚表面损伤进行了表征。发现非晶化。发生多晶化、位错和内部微裂纹，并且这些材料响应强烈地依赖于切割方向。当在[1（1）over bar 0]和[0（1）over bar 0]方向上切割时，即使当表面被“延性”切割时，也会出现由微裂纹和位错群组成的深线缺陷;而对于[128（309）over bar 0]方向，损伤深度减少了五倍。(C)2012年CIRP。
Nanoprecision plunge cutting tests were carried out on single-crystal silicon (0 0 1) samples along various directions at different tool rake angles, and subsurface damage was characterized by cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy. It was found that amorphization. poly-crystallization, dislocation and internal microcracking occurred and these material responses depended strongly on the cutting direction. When cutting in the [1 (1) over bar 0] and [0 (1) over bar 0] directions, deep line defects consisting of microcracks and dislocation groups occurred even when the surface was "ductile"-cut; while for the [128 (309) over bar 0] direction, the damage depth was reduced by a factor of five. (C) 2012 CIRP.