Effects of Nb doping on thermoelectric properties of Zn_4Sb_3 at high temperatures
Effects of Nb doping on thermoelectric properties of Zn_4Sb_3 at high temperatures
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DOI：
10.1557/jmr.2009.0058
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发表时间：
2009-02
影响因子：
2.7
通讯作者：
D. Li;H. Hng;J. Ma;X. Qin
中科院分区：
文献类型：
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作者：
D. Li;H. Hng;J. Ma;X. Qin
在300 ~ 685 K的温度范围内，研究了nb掺杂Zn_4Sb_3化合物（Zn_1 - x Nb_x）_4Sb_3 （x = 0、0.005和0.01）的热电性能。结果表明，用Nb取代Zn后，所有掺杂Nb的化合物的导热系数都低于原始的β-Zn_4Sb_3。在所研究的化合物中，轻取代的（zn_0.95 nb_0.005）_4Sb_3化合物由于其电阻率和导热系数的提高而表现出最好的热电性能。在所研究的温度范围内，其优点值ZT大于未掺杂的Zn_4Sb_3化合物。特别是（zn_0.95 nb_0.005）_4Sb_3的ZT在680 K时达到1.1，比本研究得到的未掺杂Zn_4Sb_3提高了69%。
The thermoelectric properties of Nb-doped Zn_4Sb_3 compounds, (Zn_1– x Nb_x)_4Sb_3 ( x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn_4Sb_3. Among the compounds studied, the lightly substituted (Zn_0.995Nb_0.005)_4Sb_3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn_4Sb_3 compound for the temperature range investigated. In particular, the ZT of (Zn_0.995Nb_0.005)_4Sb_3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn_4Sb_3 obtained in this study.