Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentation
Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentation
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DOI：
10.1088/0268-1242/30/11/115001
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发表时间：
2015-09
影响因子：
1.9
通讯作者：
Hu Huang;Jiwang Yan
中科院分区：
文献类型：
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作者：
Hu Huang;Jiwang Yan
硅的高压相如Si-XII/Si-III表现出有吸引力的光学、电学和化学性质，但直到现在，在技术上还不可能生产大量的Si-XII或Si-III。在这项研究中，探索高压硅相有效地产生的可能性，比较纳米压痕实验进行。研究了加载速率、卸载速率和最大压入载荷对高压相形成的影响，确定了影响高压相形成的关键因素。提出了一种新的纳米压痕协议，引入了一个中间持有阶段的卸载过程。用激光显微拉曼光谱仪检测了纳米压痕下的最终相，并与传统的纳米压痕进行了比较。结果表明，即使在非常高的加载/卸载速率下，高压相Si-XII和Si-III也在中间保持阶段成功地形成。这一发现证明了通过快速机械加载和卸载快速生产高压硅相的可能性。
High-pressure phases of silicon such as Si-XII/Si-III exhibit attractive optical, electrical and chemical properties, but until now, it has been technologically impossible to produce a significant quantity of Si-XII or Si-III. In this study, to explore the possibility of generating high-pressure silicon phases efficiently, comparative nanoindentation experiments were conducted. Effects of the loading rate, unloading rate and maximum indentation load were investigated, and key factors affecting the high-pressure phase formation were identified. A new nanoindentation protocol is proposed that introduces an intermediate holding stage into the unloading process. The resulting end phases under the indent were detected by a laser micro-Raman spectrometer and compared with those formed in conventional nanoindentation. The results indicate that high-pressure phases Si-XII and Si-III were successfully formed during the intermediate holding stage even with a very high loading/unloading rate. This finding demonstrates the possibility of rapid production of high-pressure phases of silicon through fast mechanical loading and unloading.