The influence of strain energy on abnormal grain growth in copper thin films
The influence of strain energy on abnormal grain growth in copper thin films
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DOI：
10.1063/1.114455
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发表时间：
1995-08
影响因子：
4
通讯作者：
E. M. Zielinski;R. Vinci;J. Bravman
中科院分区：
文献类型：
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作者：
E. M. Zielinski;R. Vinci;J. Bravman
测量了氧化硅衬底上铜薄膜(100)和(111)晶面的双向应力和应变随退火温度的变化，发现(100)晶面异常长大。观察到的行为表明等应变平均，这与受应变能密度最小化控制的晶粒生长一致。相反，没有表现出(100)异常晶粒生长的两种薄膜似乎遵循等应力平均。这种情况下应变能密度的最小化有利于(111)晶面的长大。
Biaxial stress and strain in (100) and (111) oriented grains have been measured as a function of annealing temperature for a Cu film on an oxidized Si substrate which exhibits abnormal (100) grain growth. The observed behavior indicates isostrain averaging, which is consistent with grain growth that is controlled by strain energy density minimization. In contrast, two films which do not exhibit (100) abnormal grain growth appear to follow isostress averaging. Strain energy density minimization in this situation favors (111) grain growth.