Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge
Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge
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DOI：
10.1063/1.3561489
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发表时间：
2011-03
影响因子：
3.2
通讯作者：
C. Chia;G. Dalapati;Y. Chai;Shao-ping Lu;Weiwei He;Jing-xing Dong;D. Seng;H. K. Hui;A. Wong;A. Lau;Yuanbing Cheng;D. Chi;Zhifeng Zhu;Y. Yeo;Z. Xu;S. Yoon
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文献类型：
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作者：
C. Chia;G. Dalapati;Y. Chai;Shao-ping Lu;Weiwei He;Jing-xing Dong;D. Seng;H. K. Hui;A. Wong;A. Lau;Yuanbing Cheng;D. Chi;Zhifeng Zhu;Y. Yeo;Z. Xu;S. Yoon
研究了金属有机化学气相沉积生长的GaAs/AlxGa1−xAs/Ge结构的材料和光学性质，发现其与Al含量x有关。SIMS和PL测量表明，当x = 0.3和0.6时，10 nm的AlxGa1−xAs缓冲层在抑制Ge的外扩散方面同样有效，而x = 1.0给出了最突然的界面。在x = 0.3缓冲层的结构中，表面均方根为0.3 nm的形貌最佳。对AlxGa1−xAs缓冲层应变变化的分析表明，当x ~ 0.3时，AlxGa1−xAs- gaas界面处的压缩应变被Ge-AlxGa1−xAs界面处的拉伸应变补偿。与Ge匹配的AlxGa1−xAs晶格对于获得更好的表面形貌效果至关重要，但较高的Al含量对于消除异质界面处原子的相互扩散是首选的。
The material and optical properties of the GaAs/AlxGa1−xAs/Ge structures grown by metalorganic chemical vapor deposition were examined and found to be dependent of the Al content x. SIMS and PL measurements show that the 10 nm AlxGa1−xAs buffer layer with x = 0.3 and 0.6 are equally effective in suppressing the outdiffusion of Ge, whereas x = 1.0 gives the most abrupt interface. The best morphology with surface rms of 0.3 nm is obtained in the structure with x = 0.3 buffer layer. Analysis on change of strain in the AlxGa1−xAs buffer layer suggests that the compressive strain at the AlxGa1−xAs-GaAs interface is compensated by the tensile strain at the Ge-AlxGa1−xAs interface when x ∼ 0.3. AlxGa1−xAs lattice matched to Ge is crucial for better result in surface morphology, but higher Al content is preferred for eliminating the interdiffusion of atoms at the heterointerface.