Role of Fermi-level pinning in nanotube Schottky diodes
Role of Fermi-level pinning in nanotube Schottky diodes
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DOI：
10.1103/physrevlett.84.4693
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发表时间：
2000-05-15
影响因子：
8.6
通讯作者：
Tersoff, J
中科院分区：
文献类型：
--
作者：
Léonard, F;Tersoff, J
在半导体-金属结处，肖特基势垒高度通常由“费米能级钉扎”固定。“我们发现，当半导体碳纳米管与金属（纳米器件的最佳几何形状）接触时，其行为完全不同。即使当费米能级完全“钉扎”在界面上时，开启电压也是未钉扎结的预期电压。因此，可以调整阈值以获得最佳器件性能，这在平面接触中是不可能的。在纳米管和半导体之间的异质结中预期有类似的行为。
At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning." We find that when a semiconducting carbon nanotube is end contacted to a metal (the optimal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully "pinned" at the interface, the turn-on voltage is that expected for an unpinned junction. Thus the threshold may be adjusted for optimal device performance, which is not possible in planar contacts. Similar behavior is expected at heterojunctions between nanotubes and semiconductors.