Ion Source Development For The Proposed FNAL 750 keV Injector Upgrade
Ion Source Development For The Proposed FNAL 750 keV Injector Upgrade
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针对拟议的 FNAL 750 keV 注射器升级的离子源开发
DOI：
10.1063/1.3637398
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
D. Bollinger
中科院分区：
文献类型：
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作者：
D. Bollinger
目前有一个建议的FNAL 750 keV注入器升级，用于用新的离子源和200 MHz射频四倍频（RFQ）替换40年历史的费米国家实验室（FNAL） Cockcroft - Walton加速器。现在使用的狭缝型磁控管将被类似于布鲁克海文国家实验室（BNL）使用的圆孔磁控管所取代。BNL的运行经验表明，由于功率效率更高，这种类型的电源更可靠，寿命更长。电流源的开发工作是产生一个可靠的源，具有bbb60 mA的H -束电流，15 Hz的频率，100 μs的脉冲宽度，占空比为0.15%。该源将基于BNL设计以及在FNAL为高强度中微子源（HINS）[3]所做的开发。
Currently there is a Proposed FNAL 750 keV Injector Upgrade for the replacement of the 40 year old Fermi National Laboratory (FNAL) Cockcroft‐Walton accelerators with a new ion source and 200 MHz Radio Frequency Quadruple (RFQ). [1] The slit type magnetron being used now will be replaced with a round aperture magnetron similar to the one used at Brookhaven National Lab (BNL). Operational experience from BNL has shown that this type of source is more reliable with a longer lifetime due to better power efficiency [2]. The current source development effort is to produce a reliable source with >60 mA of H− beam current, 15 Hz rep‐rate, 100 μs pulse width, and a duty factor of 0.15%. The source will be based on the BNL design along with development done at FNAL for the High Intensity Neutrino Source (HINS) [3].