Significant spin polarization of Co2MnGa Heusler thin films on MgO(100) measured by ultraviolet photoemission spectroscopy

Significant spin polarization of Co2MnGa Heusler thin films on MgO(100) measured by ultraviolet photoemission spectroscopy
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紫外光电子能谱测量 MgO(100) 上 Co2MnGa Heusler 薄膜的显着自旋极化

DOI:
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发表时间:
2011
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影响因子:
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通讯作者:
M. Jourdan
M. Jourdan
中科院分区:
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文献类型:
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作者:
Michaela Hahn;G. Schönhense;E. A. Jorge;M. Jourdan

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用自旋分辨紫外光电子能谱(SRUPS)研究了生长在MgO(100)衬底上的Heusler化合物Co2 MnGa的自旋相关价带结构。使用真空手提箱,将外延薄膜样品从沉积室转移到具有高效自旋检测器的SRUPS室中。运输的结果只有在弱氧化的适度反应性化合物Co2 MnGa。在费米能级下得到了34%的自旋极化。自旋极化的能量依赖性,包括在E-EF =-0.6 eV时的符号变化,与赫斯勒化合物体性质的理论预测非常一致。 
The spin dependent valence band structure of the Heusler compound Co2MnGa grown on MgO(100) is investigated by spin resolved ultraviolet photoemission spectroscopy (SRUPS). Using a vacuum suitcase, epitaxial thin film samples are transferred from a deposition chamber into an SRUPS chamber with a highly efficient spin detector. The transport results only in weak oxidation of the moderately reactive compound Co2MnGa. A spin polarization of 34% is obtained at the Fermi energy. The energy dependence of the spin polarization including a sign change at E−EF=−0.6 eV is in good agreement with theoretical predictions of the bulk properties of the Heusler compound.
DOI: 10.1088/0022-3727/40/6/s05
发表时间: 2007-03-21
影响因子: 3.4
作者:
Cinchetti, M.;Wuestenberg, J.-P.;Aeschlimann, M.
通讯作者: Aeschlimann, M.
DOI: 10.1063/1.3114425
发表时间: 2009-04-06
影响因子: 4
作者:
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DOI: 10.1088/0022-3727/42/8/084016
发表时间: 2009-04-21
影响因子: 3.4
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