Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
复制标题
DOI：
10.1038/nmat5009
复制
发表时间：
2017-12-01
期刊：
影响因子：
41.2
通讯作者：
Venkatesan, T.
中科院分区：
文献类型：
--
作者：
Goswami, Sreetosh;Matula, Adam J.;Venkatesan, T.
非易失性存储器将在下一代数字技术中发挥决定性作用。闪存目前是该领域的主要参与者，但它们无法满足可扩展性和耐用性的商业需求。电阻式存储器件，特别是基于低成本、溶液可处理和化学可调有机材料的存储器，是业界探索的有前途的替代方案。然而，迄今为止，它们还缺乏商业翻译所需的性能和机制理解。在这里，我们报告了一种基于过渡金属配合物的自旋涂层有源层的电阻式存储器件，该器件具有高再现性（类似于350器件），快速开关（10(6)s）和可扩展性（低至类似于60nm(2)）。原位拉曼光谱和紫外可见光谱以及光谱电化学和量子化学计算表明，配体的氧化还原态决定了器件的开关状态，而反离子控制了滞后。这一发现可能会加速有机阻性存储器的技术部署。
Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (similar to 350 devices), fast switching (10(6) s) and scalability (down to similar to 60nm(2)). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.