Numerical simulation of antiferromagnetic spin-pairing effects in diluted magnetic semiconductors and enhanced paramagnetism at interfaces.
Numerical simulation of antiferromagnetic spin-pairing effects in diluted magnetic semiconductors and enhanced paramagnetism at interfaces.
复制标题
稀释磁性半导体中反铁磁自旋配对效应和界面增强顺磁性的数值模拟。
DOI：
10.1103/physrevb.49.10341
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Hagston
中科院分区：
文献类型：
--
作者：
Fatah;Piorek;Harrison;Stirner;Hagston
对稀磁半导体中相邻磁性离子的反铁磁自旋配对进行了数值模拟。利用随机分布的磁性离子只需要包括最近邻的相互作用，以便与实验观察到的低场体磁化特性的协议。然而，后者被证明是一个相对不敏感的措施，在合金系统中的有序度，实验结果可以同样很好地解释，通过假设可观的合金集群。模拟还表明，有一个增强的顺磁性与界面层中的量子阱结构。
A numerical simulation of the antiferromagnetic spin pairing of neighboring magnetic ions within a diluted magnetic semiconductor is presented. Utilizing a random distribution of the magnetic ions requires the inclusion of nearest-neighbor interactions only in order to give agreement with the low-field bulk-magnetization properties observed experimentally. However, the latter are shown to be a relatively insensitive measure of the degree of ordering in the alloy system, and the experimental results could equally well be accounted for by assuming appreciable alloy clustering. The simulations also show that there is an enhancement in the paramagnetism associated with the interface layers in a quantum-well structure.