Substrate integrated waveguide bandstop filter using partial-height via-hole resonators in thick substrate

Substrate integrated waveguide bandstop filter using partial-height via-hole resonators in thick substrate
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DOI:
10.1049/iet-map.2015.0141
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发表时间:
2015-06
影响因子:
1.7
通讯作者:
M. Esmaeili;J. Bornemann;P. Krauss
M. Esmaeili;J. Bornemann;P. Krauss
中科院分区:
计算机科学4区
文献类型:
--
作者:
M. Esmaeili;J. Bornemann;P. Krauss

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介绍了厚基板上的基板集成波导(SIW)带阻滤波器。增加的基板高度允许部分高度通孔充当谐振器,其相互作用提供了广泛的可能耦合系数,从而形成宽带带阻滤波器。与脊状全金属波导滤波器相比,具有部分高度通孔的 SIW 滤波器具有较小的外形、较低的制造成本,并且可以与微带或共面波导等其他平面电路集成。带阻滤波器的设计方法依赖于众所周知的提取极点技术,该技术允许设计人员独立控制反射零点的位置。提取滤波器低通等效电路的参数并用于滤波器物理尺寸的初始设计。 µWave Wizard 和 CST 软件包用于滤波器仿真和优化。原型带阻滤波器的设计中心频率为 10.74 GHz,带宽为 1.58 GHz。公差分析证明了制造误差对过滤器性能的影响。仿真和测量结果之间的良好一致性证实了设计方法的可靠性和鲁棒性及其对厚基板上的 SIW 技术的适用性。
A substrate integrated waveguide (SIW) bandstop filter on thick substrate is introduced. The increased substrate height permits partial-height via holes to act as resonators whose interaction provides a wide range of possible coupling coefficients that result in wideband bandstop filters. In contrast to ridged all-metal waveguide filters, SIW filters with partial-height via holes maintain a small profile, low manufacturing cost and they can be integrated with other planar circuitry such as microstrip or coplanar waveguide. The design method of the bandstop filter relies on the well-known extracted-pole technique which allows designers to independently control the locations of reflection zeros. The parameters of the lowpass equivalent circuit of the filter are extracted and used for the initial design of the physical dimensions of the filter. The software packages µWave Wizard and CST are used for filter simulation and optimisation. A prototype bandstop filter is designed for a centre frequency of 10.74 GHz and a bandwidth of 1.58 GHz. Tolerance analyses demonstrate the influence of manufacturing inaccuracies on the filter performance. Good agreement between simulated and measured results confirms the reliability and robustness of the design method and its applicability to SIW technology on thick substrate.