A new approach to free-standing GaN using β-Ga2O3 as a substrate
A new approach to free-standing GaN using β-Ga2O3 as a substrate
复制标题
DOI：
10.1039/c2ce25976a
复制
发表时间：
2012-01-01
期刊：
影响因子：
3.1
通讯作者：
Fornari, Roberto
中科院分区：
文献类型：
--
作者：
Kachel, Krzysztof;Korytov, Maxim;Fornari, Roberto
在β - ga2o3（100）上，利用原位NH3处理β - ga2o3衬底形成的中低温缓冲层，采用伪hvpe方法生长了六方GaN（0001）。报道了一种从β - ga2o3衬底中分离大块GaN的简单方法。利用高分辨率x射线衍射和电子显微镜技术研究了GaN和GaN- β - ga2o3界面的结构特性。用氰化镓作为镓的运输剂，用NH3作为氮源，在β - ga2o3上沉积GaN层。这些层的性质与生长在蓝宝石上的样品进行了比较。
Hexagonal GaN (0001) has been grown by a pseudo-HVPE method on beta-Ga2O3 (100) using an intermediate low-temperature buffer layer formed by in situ NH3 treatment of beta-Ga2O3 substrate. A simple method for self-separation of bulk GaN from the beta-Ga2O3 substrate is reported. The structural properties of the GaN and GaN-beta-Ga2O3 interface were investigated by high-resolution X-ray diffraction and electron microscopy techniques. GaN layers were deposited on beta-Ga2O3 by using gallium cyanide as a transport agent for gallium and, NH3 as a source of nitrogen. The properties of these layers are compared with those of samples grown on sapphire.