Hyperdoping of Si by ion implantation and pulsed laser melting
Hyperdoping of Si by ion implantation and pulsed laser melting
复制标题
DOI：
10.1016/j.mssp.2016.11.005
复制
发表时间：
2017-05
影响因子：
4.1
通讯作者：
Wenjie Yang;J. Mathews;James S. Williams
中科院分区：
文献类型：
--
作者：
Wenjie Yang;J. Mathews;James S. Williams
离子注入后脉冲激光熔化是一种广泛研究的方法，用于超掺杂Si，其杂质浓度超过平衡溶解度限制几个数量级。在过去的十年中，超掺杂硅作为一种中间能带材料的潜力吸引了新的兴趣。在这篇综述中，我们首先研究了早期激光退火研究中固相和液相晶体再生长的重要实验结果。脉冲激光熔化后的高度非平衡再生长动力学及其对掺杂剂掺入工艺的影响进行了讨论。然后，我们回顾了最近的工作，在超掺杂硅增强子带隙光响应，并给出了一个简短的讨论光电探测器器件的性能。
Ion implantation followed by pulsed laser melting is an extensively-studied method for hyperdoping Si with impurity concentrations that exceed the equilibrium solubility limit by orders of magnitude. In the last decade, hyperdoped Si has attracted renewed interest for its potential as an intermediate band material. In this review, we first examine the important experimental results on both solid and liquid phase crystal regrowth from early laser annealing studies. The highly non-equilibrium regrowth kinetics following pulsed laser melting and its implications for dopant incorporation processes are discussed. We then review recent work in hyperdoped Si for enhanced sub-band gap photoresponse and give a brief discussion on photodetector device performance.