Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
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DOI：
10.1016/j.jallcom.2015.09.007
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发表时间：
2015-12
影响因子：
6.2
通讯作者：
F. Jabli;M. A. Zaidi;N. B. Hamadi;S. S. Al-Thoyaib-S.;M. Gassoumi
中科院分区：
文献类型：
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作者：
F. Jabli;M. A. Zaidi;N. B. Hamadi;S. S. Al-Thoyaib-S.;M. Gassoumi
采用深能级瞬态谱（DLTS）、电容-电压（C-V）和电流-电压（I-V）测量等方法对SiO2/SiN钝化前后的Al0.26Ga0.73N/GaN/Si HEMT进行了表征，以了解AlGaN/GaN/Si HEMT中的电子陷阱，并对钝化前后的电子陷阱进行了对比研究。在我们的样品中观察到三个深能级电子陷阱，激活能分别为0.054 eV，0.31 eV和0.49 eV。这些陷阱的定位和识别的报告。
Al0.26Ga0.73N/GaN/Si HEMTs with and without SiO2/SiN passivation, were characterized by Deep Level Transient Spectroscopy (DLTS), Capacitance-Voltage (C–V) and Current-Voltage (I–V) measurements to understand the electronic traps in AlGaN/GaN/Si HEMTs and to make a comparative study before and after passivation. Three Deep-level electron traps were observed in our sample with an activation energy 0.054 eV, 0.31 eV and 0.49 eV. The localization and the identification of these traps are reported.