High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate
High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate
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(0001)面蓝宝石和6H-SiC衬底上的高质量AlN外延薄膜
DOI：
10.1002/pssc.200303392
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
K. Hiramatsu
中科院分区：
文献类型：
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作者：
T. Shibata;K. Asai;S. Sumiya;M. Mouri;Mutsuhiro Tanaka;O. Oda;H. Katsukawa;H. Miyake;K. Hiramatsu
本文研究了在（0001）面蓝宝石和6 H-SiC衬底上生长的高质量AlN外延膜的晶体质量。AlN外延膜使用低压金属有机气相外延（LP-MOVPE）方法生长。在两种衬底上均实现了0.5-1 μ m厚的AlN膜，没有任何裂纹。发现两种AlN薄膜具有相似的晶体质量，尽管AlN和每个衬底之间的面内晶格失配有很大的差异。AlN薄膜具有原子级平坦的表面，具有清晰的原子台阶。X射线摇摆曲线（XRC）测量结果表明，两种AlN薄膜都具有较小的倾斜镶嵌性，但相对较大的扭曲镶嵌性。AlN膜表面区域的位错密度约为1 × 1010 cm-2，且大多数位错由刃型位错组成。（© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
This paper presents crystal qualities of high-quality AlN epitaxial films on (0001)-faced sapphire and6H-SiC substrates. The AlN epitaxial films are grown using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. 0.5–1 μm-thick AlN films without any cracks are realized on both substrates. Both of AlN films are found to have similar crystal qualities in spite of large difference in in-plane lattice mismatch between AlN and each substrate. The AlN films have an atomically flat surface with clear atomic steps. Results of X-ray rocking curve (XRC) measurement indicate that both of the AlN films have small tilted mosaicity, however relatively large twisted mosaicity. Dislocation density of the AlN films in its surface region is approximately as low as 1 × 1010 cm−2 and most of dislocations consist of edge-type dislocations. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)