Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers
Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers
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自组织InGaAs/GaAs量子点和量子点激光器的替代前驱体金属有机化学气相沉积
DOI：
10.1063/1.1544641
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发表时间：
2003
影响因子：
4
通讯作者：
P. Werner
中科院分区：
文献类型：
--
作者：
R. Sellin;I. Kaiander;D. Ouyang;T. Kettler;U. W. Pohl;D. Bimberg;N. Zakharov;P. Werner
报道了以三层自组织InxGa 1 −xAs/GaAs量子点（QDs）为活性介质，以叔丁基胂（TBA）为前体，采用金属有机化学气相沉积（MOCVD）技术制备激光二极管。证明了使用TBA的单分散量子点的外延。由于TBA在低温下的高裂解效率，关键的生长参数V/III比和温度几乎可以独立地调节。脊波导量子点激光器的透明电流为29.7 A/cm 2，相当于每层量子点9.9 A/cm 2，内部量子效率为91.4%，内部光损耗为2.2 cm−1。
Metalorganic chemical vapor deposition of laser diodes based on triple stacks of self-organized InxGa1−xAs/GaAs quantum dots (QDs) as active medium using the alternative precursor tertiarybutylarsine (TBAs) is reported. Epitaxy of monodispersed QDs using TBAs is demonstrated. Due to the high cracking efficiency of TBAs at low temperatures, the crucial growth parameters V/III ratio and temperature can be tuned almost independently. Ridge-waveguide QD lasers show a transparency current of 29.7 A/cm2—equivalent to 9.9 A/cm2 per QD layer—an internal quantum efficiency of 91.4%, and an internal optical loss of 2.2 cm−1.