Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni] (n) /Co/Ta Multilayer Hall Bars.
Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni] (n) /Co/Ta Multilayer Hall Bars.
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DOI：
10.1038/s41598-017-01079-7
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发表时间：
2017-04-20
影响因子：
4.6
通讯作者：
Lew WS
中科院分区：
文献类型：
--
作者：
Li S;Goolaup S;Kwon J;Luo F;Gan W;Lew WS
电流引起的自旋轨道扭矩（SOT）作为控制纳米磁性结构磁化的有效方法引起了广泛的关注。 SOT 引起的磁化反转通常借助面内偏置磁场来实现。在本文中，我们表明，通过选择具有弱面外磁各向异性的薄膜叠层，可以在微米级多层膜中实现无场 SOT 感应开关。使用直流电，在 Pt/[Co/Ni]2/Co/Ta 结构中获得确定性双极磁化反转。克尔成像揭示了SOT引起的磁化翻转过程是通过系统中反向磁畴的成核和磁畴壁的扩展来完成的。
Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show that by selecting a film stack with weak out-of-plane magnetic anisotropy, field-free SOT-induced switching can be achieved in micron sized multilayers. Using direct current, deterministic bipolar magnetization reversal is obtained in Pt/[Co/Ni]2/Co/Ta structures. Kerr imaging reveals that the SOT-induced magnetization switching process is completed via the nucleation of reverse domain and propagation of domain wall in the system.