Nanoscale electronics based on two-dimensional dopant patterns in silicon
Nanoscale electronics based on two-dimensional dopant patterns in silicon
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DOI：
10.1116/1.1813466
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发表时间：
2004-11-01
影响因子：
1.4
通讯作者：
Tucker, JR
中科院分区：
文献类型：
--
作者：
Shen, TC;Kline, JS;Tucker, JR
报道了一种与现有硅技术兼容的纳米级制备工艺。预植入接触阵列为扫描隧道显微镜（STM）定义的掺杂物模式提供外部引线。STM的低能电子束从H端Si（100）表面去除氢，用于PH3前体分子的选择性吸附，然后进行室温Si过度生长和500度快速热退火，以在与As+注入线接触的情况下产生活化的p供体模式。本文报道了50和95纳米宽的p供体线的电电阻和磁电阻测量，以及由聚焦离子束产生的ga受体线，作为将Si器件制造扩展到原子尺寸的一种手段。(C) 2004美国真空学会。
A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted contact arrays provide external leads for scanning tunneling microscope (STM)-defined dopant patterns. The STM's low energy electron beam removes hydrogen from H terminated Si(100) surfaces for selective adsorption of PH3 precursor molecules, followed by room temperature Si overgrowth and 500 degreesC rapid thermal anneal to create activated P-donor patterns in contact with As+-implanted lines. Electrical and magnetoresistance measurements are reported here on 50 and 95 nm-wide P-donor lines, along with Ga-acceptor wires created by focused ion beams, as a means for extending Si device fabrication toward atomic dimensions. (C) 2004 American Vacuum Society.