Modified SbSI Electroceramics
Modified SbSI Electroceramics
复制标题
改性锑化硅电陶瓷
DOI：
10.1080/00150190903412804
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发表时间：
2009
期刊：
影响因子：
0.8
通讯作者：
J. Grigas
中科院分区：
文献类型：
--
作者：
B. Garbarz;J. Grigas
随着居里温度的提高（Tc ≥ 330 K），研制出了SbSI铁电陶瓷. X射线衍射分析表明，该电瓷具有正交相结构。测定了晶格参数a，B，c。在Tc处的晶格参数c和体积V表现出异常。EDS研究证实了电瓷的纯度，并通过实验确定了定性和定量的组成。详细的SEM分析使其结构的定性描述，所获得的图像是非常典型的SbSI型化合物。低于Tc时，电瓷具有高体积压电模量和其他对应用重要的参数。电瓷在微波频率下也具有高介电常数。
SbSI ferroelectric electroceramics has been developed with the increased Curie temperature (Tc ≈ 330 K). X-ray diffraction analysis has shown that the electroceramics exhibit the orthorhombic structure. The lattice parameters a, b, c has been determined. The lattice parameter c and the volume V at Tc exhibit an anomaly. The EDS study confirmed the purity of electroceramics and experimentally assumed qualitative and quantitative composition. A detailed SEM analysis enabled the qualitative description of their structure, the obtained images are very characteristic of SbSI-type compounds. Below Tc, the electroceramics possess high volume piezoelectric modulus and other parameters important for applications. The electroceramics also possess high dielectric permittivity up to microwave frequencies.