Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.
Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.
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DOI：
10.1021/acsami.7b06595
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发表时间：
2017-08
影响因子：
9.5
通讯作者：
S. Ganti;P. King;E. Arac;K. Dawson;Mikko J. Heikkilä;J. H. Quilter;B. Murdoch;P. Cumpson;A. O'Neill
中科院分区：
文献类型：
--
作者：
S. Ganti;P. King;E. Arac;K. Dawson;Mikko J. Heikkilä;J. H. Quilter;B. Murdoch;P. Cumpson;A. O'Neill
我们引入了一种创建低电阻金属-半导体欧姆接触的新方法，该方法使用 Ge 上的高电导率金岛金属薄膜 (IMF) 进行说明，并在低施加电压下启动热载流子注入。相同的金属化工艺同时允许与 n-Ge 和 p-Ge 欧姆接触，因为热载流子绕过了金属/n-Ge 界面处形成的肖特基势垒。据报道，接触电阻率比以前的技术提高了 2.5 倍，可实现与 n 型和 p 型半导体的欧姆接触。 4.2 K 的欧姆接触证实了非平衡电流传输。通过在 Au/Ge 共晶温度附近退火，自组装的 Au IMF 强烈取向于 Ge。只要 Au 层低于临界厚度，就会形成 Au IMF 纳米结构。我们预计优化的 IMF 接触可能适用于许多材料系统。优化这种金属-半导体接触的新范例为改进纳米电子系统以及电压控制热空穴和电子的研究提供了前景。
We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.