Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy

Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy
复制标题

DOI:
10.1063/5.0040047
复制
发表时间:
2021-02
期刊:
影响因子:
6.1
通讯作者:
J. Roth;T. Kuznetsova;L. Miao;A. Pogrebnyakov;N. Alem;R. Engel-Herbert
J. Roth;T. Kuznetsova;L. Miao;A. Pogrebnyakov;N. Alem;R. Engel-Herbert
中科院分区:
材料科学2区
文献类型:
--
作者:
J. Roth;T. Kuznetsova;L. Miao;A. Pogrebnyakov;N. Alem;R. Engel-Herbert

文献摘要

相似文献

理论上预测,[111]取向的钙钛矿层中会出现奇异的材料性质和拓扑非平凡表面态。已经发现这种[111]取向的钙钛矿超晶格的实现具有挑战性,并且甚至钙钛矿氧化物膜沿着该结晶方向的生长也被证明是一项艰巨的任务,这归因于钙钛矿(111)表面的高极性特性。迄今为止,沿着该方向的成功外延生长限于涉及相对高动能的薄膜沉积技术,具体地说是脉冲激光沉积和溅射。在这里,我们报告的自调节生长的[111]取向的高品质SrVO3混合分子束外延。在非极性表面上通过混合分子束外延生长钙钛矿氧化物的有利的生长动力学也存在于[111]取向的膜的生长中,导致高质量的SrVO3(111)薄膜,其剩余电阻率比超过20。使用混合分子束外延沿着沿着能量上不利的晶体学方向生长高质量钙钛矿氧化物的能力开辟了研究拓扑非平凡和相关电子系统的输运性质的机会。
Exotic material properties and topological nontrivial surface states have been theoretically predicted to emerge in [111]-oriented perovskite layers. The realization of such [111]-oriented perovskite superlattices has been found challenging, and even the growth of perovskite oxide films along this crystallographic direction has been proven as a formidable task, attributed to the highly polar character of the perovskite (111) surface. Successful epitaxial growth along this direction has so far been limited to thin film deposition techniques involving a relatively high kinetic energy, specifically pulsed laser deposition and sputtering. Here, we report on the self-regulated growth of [111]-oriented high-quality SrVO3 by hybrid molecular beam epitaxy. The favorable growth kinetics available for the growth of perovskite oxides by hybrid molecular beam epitaxy on non-polar surfaces was also present for the growth of [111]-oriented films, resulting in high-quality SrVO3(111) thin films with residual resistivity ratios exceeding 20. The ability to grow high-quality perovskite oxides along energetically unfavorable crystallographic directions using hybrid molecular beam epitaxy opens up opportunities to study the transport properties of topological nontrivial and correlated electron systems.