Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
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DOI：
10.1109/55.974795
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发表时间：
2002-01-01
影响因子：
4.9
通讯作者：
Hughes, BT
中科院分区：
文献类型：
--
作者：
Kuball, M;Hayes, JM;Hughes, BT
报道了在蓝宝石和碳化硅衬底上生长的有源AlGaN/GaN HFET中温度的非侵入性测量，即自加热效应。微拉曼光谱被用来产生接近1微米空间分辨率的温度图，温度精度优于10摄氏度。在器件的栅漏开口处测量到高达180摄氏度的显著温升。三维散热模型的计算结果与实验数据吻合较好。在蓝宝石和碳化硅衬底上制作的器件的比较表明，碳化硅衬底器件的热阻比蓝宝石衬底低5倍。
We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with approximate to1 mum spatial resolution and a temperature accuracy of better than 10 degreesC. Significant temperature rises up to 180 degreesC were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had similar to5 times lower thermal resistance.