Atomic Layer Deposition of Metal Fluorides Using HF–Pyridine as the Fluorine Precursor
Atomic Layer Deposition of Metal Fluorides Using HF–Pyridine as the Fluorine Precursor
复制标题
使用 HF-吡啶作为氟前驱体原子层沉积金属氟化物
DOI：
10.1021/acs.chemmater.5b04360
复制
发表时间：
2016
影响因子：
8.6
通讯作者：
S. George
中科院分区：
文献类型：
--
作者：
Younghee Lee;Huaxing Sun;M. Young;S. George
用氢氟化氢从氟化氢-吡啶溶液中沉积了多种金属氟化物，包括氟化锆、氟化锰、氟化氢、氟化镁和氟化锌。利用原位石英晶体微天平(QCM)研究了这些金属氟化物的生长情况。以四(乙基甲酰胺基)锆和氢氟化氢为反应原料，研究了四(乙基甲胺基)锆-氟化氢反应的模型体系。QCM测量表明，在150°C下，ZrF4ALD的每循环质量增量(MGPC)为35.5 ng/(cm2循环)。MGPC相当于150°C下0.9A/循环的生长速率。此外，还分别使用双(乙基环戊二烯)锰、四(二甲氨基)Hfn、双(乙基环戊二烯)镁、二乙基锌和四丁基氧化锆作为金属前驱体生长了MnF2、HfF4、MgF2、ZnF2和额外的ZrF4。在150℃下，MnF2、HfF4、MgF2、ZnF2和ZrF4 ALD的生长速率分别为0.4、0.8、0.4、0.7和0.6A/周期，所有这些金属氟化物ALD系统都表现出自限反应。..。
The atomic layer deposition (ALD) of a variety of metal fluorides including ZrF4, MnF2, HfF4, MgF2, and ZnF2 was demonstrated using HF from a HF–pyridine solution. In situ quartz crystal microbalance (QCM) studies were utilized to examine the growth of these metal fluorides. ZrF4 ALD using tetrakis(ethylmethylamido) zirconium and HF as the reactants was studied as a model system. The QCM measurements determined a mass gain per cycle (MGPC) of 35.5 ng/(cm2 cycle) for ZrF4 ALD at 150 °C. This MGPC was equivalent to a growth rate of 0.9 A/cycle at 150 °C. MnF2, HfF4, MgF2, ZnF2, and additional ZrF4 were also grown using bis(ethylcyclopentadienyl) manganese, tetrakis(dimethylamido) hafnium, bis(ethylcyclopentadienyl) magnesium, diethylzinc, and zirconium tetra-tert-butoxide as the metal precursors, respectively. The growth rates for MnF2, HfF4, MgF2, ZnF2, and ZrF4 ALD were 0.4, 0.8, 0.4, 0.7, and 0.6 A/cycle, respectively, at 150 °C. All of these metal fluoride ALD systems displayed self-limiting reactions. ...