Effect of top electrodes and light sources on photovoltaic properties of polycrystalline Bi4Ti3O12 film
Effect of top electrodes and light sources on photovoltaic properties of polycrystalline Bi4Ti3O12 film
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顶电极和光源对多晶Bi4Ti3O12薄膜光伏性能的影响
DOI：
10.1016/j.matlet.2016.05.084
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发表时间：
2016
影响因子：
3
通讯作者：
W.F. Zhang
中科院分区：
文献类型：
--
作者：
K. Wang;H.W. Zheng;X.J. Li;G.L. Yuan;W.X. Gao;L. Wei;X.A. Zhang;W.F. Zhang
采用溶胶-凝胶法制备了Bi 4 Ti 3 O 12（BTO）多晶薄膜。压电力显微镜测量证实了BTO薄膜的局部铁电性。BTO薄膜的带隙估计为3.45 eV，Ag/BTO/FTO的吸收强度大于Pt/BTO/FTO的。分别在405 nm的白色光和紫色光照射下测量了两种结构的光伏特性。研究发现，器件的PV响应强烈依赖于激发光源和顶部电极。该器件具有较大的开/关光电流比，并具有良好的稳定性和重复性。结合肖特基势垒和表面等离子体激元效应对光伏响应进行了简要解释。
Polycrystalline Bi4Ti3O12(BTO) film was deposited by a sol-gel method. Piezoelectric force microscopy measurement confirmed the local ferroelectricity of the BTO film. The band gap of the BTO film is estimated to be 3.45 eV and the absorption intensity of Ag/BTO/FTO is larger than that of Pt/BTO/FTO. The photovoltaic (PV) properties of the two structures were measured under the illumination of white light and purple light of 405 nm, respectively. It was found that the PV responses of the devices strongly depended on the excitation light sources and top electrodes. The devices show large ON/OFF photocurrent ratio with good stability and repeatability. The PV responses are briefly explained combined with Schottky barrier and surface plasmon effect.