A Fully Integrated 1 kb Magnetoresistive Random Access Memory with a Double Magnetic Tunnel Junction
A Fully Integrated 1 kb Magnetoresistive Random Access Memory with a Double Magnetic Tunnel Junction
复制标题
具有双磁隧道结的完全集成 1 kb 磁阻随机存取存储器
DOI：
10.1143/jjap.42.l745
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发表时间：
2003
影响因子：
1.5
通讯作者：
H. Yoda
中科院分区：
文献类型：
--
作者：
S. Ikegawa;Y. Asao;Y. Saito;Shigeki Takahashi;T. Kai;K. Tsuchida;H. Yoda
采用0.4×1.2µm2磁隧道结（MTJ）和0.18µm互补金属氧化物半导体（CMOS）技术，展示了1 kb磁阻随机存取存储器（MRAM）。在本研究中，使用了双MTJ，其设计具有比传统MTJ更大的信号裕度。双MTJ的电阻均匀性与单MTJ相当，如果优化工艺条件，预计将优于单MTJ。MTJ的磁性设计提供了良好的小行星曲线，并导致90%的比特工作在相对较宽的位线电压和字线电压范围内。
A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4×1.2 µm2 magnetic tunnel junction (MTJ) and 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.