Low-loss multimode-interference-based crossings for silicon wire waveguides
Low-loss multimode-interference-based crossings for silicon wire waveguides
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DOI：
10.1109/lpt.2006.884726
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发表时间：
2006-11-01
影响因子：
2.6
通讯作者：
Poon, Andrew W.
中科院分区：
文献类型：
--
作者：
Chen, Hui;Poon, Andrew W.
我们报告多模干涉（MMI）为基础的交叉在高折射率对比度硅线波导。我们的实验表明，MMI交叉类似于0.4 dB的插入损耗，这表明类似于0.9 dB的改善，从一个控制平面交叉相同的大小和折射率对比。我们还通过实验观察到显着的串扰抑制在我们的MMI交叉。MMI交叉传输在1520-1580 nm波长范围内表现出小于0.2 dB的波长依赖性。
We report multimode-interference (MMI)-based crossings in high-index-contrast silicon wire waveguides. Our experiments show an MMI crossing of similar to 0.4-dB insertion loss, which suggests similar to 0.9-dB improvement from a control plain crossing of the same size and refractive index contrast. We also experimentally observe significant crosstalk suppression in our MMI crossing. The MMI crossing transmission exhibits wavelength dependence of less than 0.2 dB within the 1520-1580-nm wavelength range.