Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.
Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.
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DOI：
10.1016/j.bios.2006.10.010
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发表时间：
2007-06
影响因子：
12.6
通讯作者：
Y. Alifragis;A. Volosirakis;N. Chaniotakis;G. Konstantinidis;A. Adikimenakis;A. Georgakilas
中科院分区：
文献类型：
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作者：
Y. Alifragis;A. Volosirakis;N. Chaniotakis;G. Konstantinidis;A. Adikimenakis;A. Georgakilas
我们研究了使用AlGaN/GaN高电子迁移率晶体管（HEMT）作为一种新型的换能器的离子选择性化学修饰的HEMT传感器（ChemHEMT）的发展。为此，将掺杂有离子选择性离子载体的聚氯乙烯（PVC）膜沉积到用于化学识别步骤的栅极区域上，而AlGaN/GaN HEMT用作换能器。特别是，使用厚度为50μm的缬氨霉素掺杂的膜产生具有用于监测K+的优异分析特性的传感器。K+-ChemHEMT在10− 5 ~ 10− 2 M的线性范围内具有52.4mV/pK+的灵敏度，而检测限为3.1×10− 6 M。此外，该传感器显示出类似于基于缬氨霉素的ISE的选择性，而信号随时间的稳定性和测量的重现性非常好。
We investigate the use of the AlGaN/GaN high electron mobility transistor (HEMT) as a novel transducer for the development of ion-selective chemically modified HEMT sensors (ChemHEMTs). For this, polyvinyl chloride (PVC) membrane doped with ion-selective ionophores is deposited onto the area of the gate for the chemical recognition step, while the AlGaN/GaN HEMT is used as the transducer. In particular, the use of a valinocycin doped membrane with thickness of 50μm generates a sensor with excellent analytical characteristics for the monitoring of K+. The K+-ChemHEMT has sensitivity of 52.4mV/pK+in the linear range of 10−5to 10−2M, while the detection limit is in the order of 3.1×10−6M. Also, the sensor shows selectivity similar to valinomycin-based ISEs, while the signal stability over time and the measurement to measurement reproducibility are very good.