Novel dual-mode photoresist based on cationic polymerization and acidolysis

Novel dual-mode photoresist based on cationic polymerization and acidolysis
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基于阳离子聚合和酸解的新型双模光刻胶

DOI:
10.1021/cm00033a022
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发表时间:
1993
期刊:
影响因子:
--
通讯作者:
T. Yamaoka
T. Yamaoka
中科院分区:
--
文献类型:
--
作者:
Seongyun Moon;Kazuhiko Naitoh;T. Yamaoka

文献摘要

被引文献

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合成了对羟基苯乙烯和对(2-乙烯氧基乙氧基)苯乙烯的共聚物,制得了灵敏度约为100 nm的正性抗蚀剂。25 mJ/cm 1 2 345678910在365 nm光下通过使用二苯基碘鎓 8-苯胺基萘-1-磺酸盐和ca.用三苯基三氟甲磺酸锍作光生酸剂,在248 nm光下,可获得106 mJ/cm ~ 2的光生酸能力。含有光酸产生剂的对羟基苯乙烯和对(2-(乙烯氧基)乙氧基)苯乙烯的共聚物具有正或负的工作行为,这取决于工艺条件如预烘烤温度或曝光能量。这种复杂的行为是由乙烯基醚基团的不同反应模式引起的。乙烯基醚侧基在热能的作用下与苯酚的羟基反应形成交联网络。交联被光生酸裂解。乙烯基醚基团还经历阳离子聚合和光生酸解之间的竞争反应。
Copolymers of p-hydroxystyrene and p-(2-(vinyloxy) ethoxy) styrene were synthesized, and positive resists with sensitivities of ca. 25 mJ/cm1 2 345678910at 365-nm light by using diphenyliodonium 8-anilinonaphthalene-l-sulfonate and ca. 106 m J/cm2 at 248-nm light by using triphenylsulfonium trifluoromethanesulfonate as photoacid generator were obtained. A copolymer of p-hydroxy-styrene and p-(2-(vinyloxy) ethoxy) styrene containing a photoacid generator had either positive or negative working behavior, depending on process conditions such as prebaking temperature or exposure energy. This complicated behavior is caused by the diverse reaction modes of vinyl ether groups. The pendant vinyl ether group reacts with the hydroxyl group of phenol with the aid of thermal energyto form cross-linked networks. The cross-links are cleaved by photogenerated acids. The vinyl ether groups also undergocompeting reactions between cationic polymerization and acidolysis by photogenerated acids.