Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications
Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications
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DOI：
10.1109/tns.2018.2820385
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发表时间：
2018-08-01
影响因子：
1.8
通讯作者：
Magnan, Pierre
中科院分区：
文献类型：
--
作者：
Le Roch, Alexandre;Virmontois, Cedric;Magnan, Pierre
我们建议识别由质子和碳辐照引起的商业现成的钉扎光电二极管（PPD）8 T-CMOS图像传感器（CIS）的位移损伤缺陷，致力于空间应用工作在全局快门模式。本文旨在提供一个更好的理解，在特定的空间图像传感器的缺陷创建。因此，它导致了与我们在使命中发现的结果相当的结果。研究的重点是位于PPD耗尽区的体缺陷，这代表了PPD CIS中的主要暗电流贡献。四个传感器已被照射与碳离子和质子在不同的能量和通量。利用暗电流谱和随机电报信号（RTS）分析，我们研究了不同等时退火温度下的缺陷行为。通过结合这些结果，我们使两个互补的现象之间的联系，并提出了普遍的divacancies为基础的缺陷的暗电流的贡献。
We propose to identify the displacement damage defects induced by proton and carbon irradiations in a commercial off-the-shelf pinned photodiode (PPD) 8T-CMOS image sensors (CISs) dedicated to space application operating in global shutter mode. This paper aims to provide a better understanding of defects creation in a specific space image sensor. Therefore, it leads to comparable results to those we could find during the mission. The study focuses on bulk defects located in the PPD depleted region which represents the main dark current contribution in PPD CIS. Four sensors have been irradiated with carbon ions and protons at different energies and fluencies. Using both the dark current spectroscopy and the random telegraph signal (RTS) analysis, we investigate defects behavior for different isochronal annealing temperatures. By combining these results, we make the connection between two complementary phenomena and bring out the prevalence of divacancies-based defects in term of dark current contribution.