Deposition of GaSb Films from the Single-Source Precursor [t-Bu2GaSbEt2]2†
Deposition of GaSb Films from the Single-Source Precursor [t-Bu2GaSbEt2]2†
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从单源前驱体 [t-Bu2GaSbEt2]2 沉积 GaSb 薄膜†
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
K. Wandelt
中科院分区：
文献类型：
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作者：
S. Schulz;S. Fahrenholz;A. Kuczkowski;W. Assenmacher;A. Seemayer;A. Hommes;K. Wandelt
详细研究了[t-Bu 2 GaSbEt 2 ] 2（1）作为GaSb薄膜沉积的单源前驱体的潜在应用。在不使用任何载气的情况下，在350 ° C和550 °C之间通过高真空金属有机化学气相沉积在Si（100）上生长结晶GaSb薄膜（闪锌矿型）。采用差示扫描量热法和热重分析/差热分析法研究了1的热性质，采用X射线衍射、扫描电子显微镜、透射电子显微镜、原子力显微镜、能量色散X射线谱、电子能量损失谱和俄歇电子能谱对GaSb薄膜进行了详细的表征。
The potential application of [t-Bu 2 GaSbEt 2 ] 2 (1) to serve as a single-source precursor for the deposition of GaSb films was investigated in detail. Crystalline GaSb films (sphalerite type) were grown on Si(100) by high-vacuum metal-organic chemical vapor deposition between 350 and 550 °C without the use of any carrier gas. The thermal properties of 1 were investigated by differential scanning calorimetry and thermogravimetric analysis/differential thermal analysis, whereas the GaSb films were characterized in detail by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and Auger electron spectroscopy.