Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force
Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force
复制标题
利用电子风力对伽马辐照 GaN HEMT 进行非热退火
DOI：
10.1149/2162-8777/ac7f5a
复制
发表时间：
2022
影响因子：
2.2
通讯作者：
Pearton, Stephen
中科院分区：
文献类型：
--
作者：
Rasel, Md Abu;Stepanoff, Sergei;Haque, Aman;Wolfe, Douglas E.;Ren, Fan;Pearton, Stephen
减少电子产品中的辐射损伤仍然是一项挑战，因为唯一成熟的技术--热退火--并不能保证取得良好的结果。在这项研究中，提出了一种非热退火技术，其中使用来自非常短持续时间和高电流密度脉冲的电子动量来定向和激活缺陷。该技术在60Co伽马辐照(5×106rad剂量和180×103rad h−1剂量率)GaN高电子迁移率晶体管上得到了验证。饱和电流和最大跨导完全恢复，阈值电压在30℃或更低时部分恢复。相比之下，300℃的热退火主要恶化了辐照后的特性。拉曼光谱显示，缺陷的增加降低了二维电子气(2DEG)的浓度，增加了载流子散射。由于电子动量力不适用于聚合物表面钝化，因此该方法不能恢复栅漏电流，但比热退火性能更好。这项研究的结果可能有助于减轻电子产品中某些形式的辐射损伤，这些损伤是很难通过热退火实现的。
Radiation damage mitigation in electronics remains a challenge because the only established technique, thermal annealing, does not guarantee a favorable outcome. In this study, a non-thermal annealing technique is presented, where electron momentum from very short duration and high current density pulses is used to target and mobilize the defects. The technique is demonstrated on 60 Co gamma irradiated (5× 10 6 rad dose and 180× 10 3 rad h− 1 dose rate) GaN high electron mobility transistors. The saturation current and maximum transconductance were fully and the threshold voltage was partially recovered at 30 C or less. In comparison, thermal annealing at 300 C mostly worsened the post-irradiation characteristics. Raman spectroscopy showed an increase in defects that reduce the 2-dimensional electron gas (2DEG) concentration and increase the carrier scattering. Since the electron momentum force is not applicable to the polymeric surface passivation, the proposed technique could not recover the gate leakage current, but performed better than thermal annealing. The findings of this study may benefit the mitigation of some forms of radiation damage in electronics that are difficult to achieve with thermal annealing.