Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride
Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride
复制标题
基于碳掺杂二维六方氮化硼的深紫外光电探测器
DOI：
10.1021/acsami.0c05850
复制
发表时间：
2020
影响因子：
9.5
通讯作者：
Zhang Xingwang
中科院分区：
文献类型：
--
作者：
Wang Ye;Meng Junhua;Tian Yan;Chen Yanan;Wang Gaokai;Yin Zhigang;Jin Peng;You Jingbi;Wu Jinliang;Zhang Xingwang
近年来，利用二维六方氮化硼（h-BN）薄膜制备深紫外（DUV）光电探测器成为研究热点。然而，现有的研究表明，h-BN基光电探测器的性能相对较差。在这项工作中，C掺杂被用来调制的h-BN的属性和改善的h-BN基光电探测器的性能。我们通过控制溅射气氛，通过离子束溅射沉积合成了具有从0到10.2原子%变化的各种C浓度的h-BN原子层。当少量C掺入h-BN中时，h-BN相保持稳定，而大量C杂质的引入导致h-BN的结晶度迅速劣化。在此基础上，制备了基于C掺杂h-BN层的深紫外光探测器，其中C掺杂量为7.5atom %的h-BN基探测器性能最好，响应度为9.2mA·W-1，明显高于本征h-BN器件。这一工作表明，C掺杂是一种可行的和有效的方法来提高h-BN光电探测器的性能。
Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA·W–1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.