Homoepitaxial Growth of Diamond Single-Phase Thin Films by Pulsed Laser Ablation of Graphite
Homoepitaxial Growth of Diamond Single-Phase Thin Films by Pulsed Laser Ablation of Graphite
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脉冲激光烧蚀石墨同质外延生长金刚石单相薄膜
DOI：
10.1143/jjap.40.l573
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Nagayama
中科院分区：
文献类型：
--
作者：
T. Yoshitake;T. Nishiyama;K. Nagayama
采用ArF准分子激光脉冲激光沉积（PLD）技术，在氧气气氛下，在金刚石（100）衬底上生长了金刚石薄膜。5×10-2 Torr的最佳氧气氛可以优先刻蚀sp2键。在550°C ~ 600°C的衬底温度下，可以生长出由直径为1-5 μm的金刚石晶体组成的单相金刚石薄膜。结果表明，通过优化沉积参数，如氧气压力和衬底温度，可以使用PLD法均匀生长金刚石薄膜。
Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5×10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 600°C, single-phase diamond films consisting of diamond crystal with diameters of 1–5 µm could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.