Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films
Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films
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DOI：
10.1063/1.1331341
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发表时间：
2001-02-15
影响因子：
3.2
通讯作者：
Waser, R
中科院分区：
文献类型：
--
作者：
Lohse, O;Grossmann, M;Waser, R
用常规磁滞回线和矩形脉冲法研究了四元Pb（Zr，Ti）O-3薄膜的极化反转过程。降低脉冲的电压电平显著地将极化切换减慢到毫秒的范围。开关电流响应在很宽的时间范围内表现出居里-冯-施魏德勒行为。这些薄膜的瞬态电流和P-V环的频率依赖性与铁电单晶的性质相比，显示出一些相似之处，但也有显着的差异。讨论了经典铁电相变的理论模型，特别是单晶和薄膜中的脉冲测量条件。结果表明，决定极化反转的不是畴壁结构和畴壁运动，而是耗散极化过程，铁电和非铁电高k电介质薄膜都可能发生这种极化反转。(C)2001年美国物理学会。
The polarization reversal process of tetragonal Pb(Zr,Ti)O-3 thin films has been intensively studied using conventional hysteresis and rectangle pulse measurements. Decreasing the voltage level of the pulses significantly slows down the polarization switching to the range of milliseconds. The switching current response shows a Curie-von Schweidler behavior over a broad time range. The transient current and the frequency dependence of the P-V loops of these films compared to the properties of ferroelectric single crystals show some similarities but also significant differences. The theoretical models of the classical ferroelectric phase transition and especially the conditions of the pulse measurements in single crystals and thin films are discussed. It leads to the conclusion that it is not the domain wall structure and domain wall motion that determine the polarization reversal but dissipative polarization processes which can take place in both ferroelectric and nonferroelectric high-k dielectric thin films. (C) 2001 American Institute of Physics.