Germanium-Based Porous Semiconductors from Molecular Zintl Anions
Germanium-Based Porous Semiconductors from Molecular Zintl Anions
复制标题
来自分子 Zintl 阴离子的锗基多孔半导体
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
M. Kanatzidis
中科院分区：
文献类型：
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作者：
G. Armatas;M. Kanatzidis
这篇综述强调了分子Zintl化合物如何被用来创造具有各种新颖的光电和气体吸收性能的新材料。本章中描述的耦合各种IV族Zintl簇的合成方法的通用性为设计具有可调化学和物理性质的新型周期性有序介孔半导体提供了重要工具。我们说明了Zintl化合物的潜力，以产生高度多孔的非氧化半导体，我们还涵盖了最近的进展中孔元素为基础的，金属硫族化物，和二元金属间合金材料的发展。这种方法背后的原则和衍生材料的应用前景进行了讨论。
This review highlights how molecular Zintl compounds can be used to create new materials with a variety of novel opto-electronic and gas absorption properties. The generality of the synthetic approach described in this chapter on coupling various group-IV Zintl clusters provides an important tool for the design of new kinds of periodically ordered mesoporous semiconductors with tunable chemical and physical properties. We illustrate the potential of Zintl compounds to produce highly porous non-oxidic semiconductors, and we also cover the recent advances in the development of mesoporous elemental-based, metal-chalcogenide, and binary intermetallic alloy materials. The principles behind this approach and some perspectives for application of the derived materials are discussed.