Properties of the in-gap states in SmB6
Properties of the in-gap states in SmB6
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DOI：
10.1016/s0038-1098(01)00004-7
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发表时间：
2001-01-01
影响因子：
2.1
通讯作者：
Sebek, J
中科院分区：
文献类型：
--
作者：
Gabáni, S;Flachbart, K;Sebek, J
我们用电导和比热测量的方法研究了中价窄禁带半导体SmB6在0.1-15K温度下的带隙内态的性质。电导结果表明，在3K以下观察到的SmB6的剩余电导是非激活的，而在杂质相关的带隙内形成的相应态具有类金属的性质。热容测量证实了In-GaP态的类金属性质，并揭示了SmB6的比热在约2K以下的增强。所观察到的行为可归因于在该化合物的类金属态内形成相干态。(C)2001爱思唯尔科学有限公司。保留所有权利。
We have studied the properties of the in-gap states of the intermediate valence narrow-gap semiconductor SmB6 by means of electrical conductivity and specific heat measurements at temperatures between 0.1 and 15 K. The electrical conductivity results imply that the residual conductivity of SmB6 which is observed below 3 K is non-activated and the corresponding state, which is formed within the impurity dependent in-gap states, has a metallic-like nature. The heat capacity measurements confirm the metallic-like properties of the in-gap states and reveal, moreover, an enhancement of the specific heat of SmB6 below about 2 K, The observed behaviour can be attributed to the formation of a coherent state within the metallic-like state of this compound. (C) 2001 Elsevier Science Ltd. All rights reserved.