Metallurgical topics in silicon device interconnections: Thin film stresses
Metallurgical topics in silicon device interconnections: Thin film stresses
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硅器件互连的冶金主题：薄膜应力
DOI：
10.1179/imr.1989.34.1.53
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
F. d'Heurle
中科院分区：
文献类型：
--
作者：
F. d'Heurle
薄膜金属化中遇到的一些问题在导言中大致按时间顺序提出，并参考了涉及各种主题的文献，如电迁移。下面的材料仅限于薄膜中的应力问题。将薄膜与衬底之间的力的一般平衡的考虑扩展到均匀连续薄膜中的应力的测量。在实际应用中，在窄导线上有边孔和通孔的情况下，应力分布变得更加复杂。从内在和外在应力的来源和它们对技术应用的意义两个方面进行了讨论。应力松弛是形成孔洞和山丘的原因之一。简要回顾了应力对粘附性和其他实际影响的影响。
Some of the problems encountered in thin film metallisations are presented approximately in chronological order in the introduction with references given to the literature dealing with a variety of topics, such as electromigration. The material which follows has been limited to the issue of stresses in thin films. A consideration of the very general equilibrium of forces between film and substrates is extended to the measurement of stresses in uniform continuous films. In practical conditions with edges and via holes along narrow conductors the stress distributions become greatly more complicated. Intrinsic and extrinsic stresses are discussed with respect both to their origin and to what they mean for technological applications. Stress relaxation is one of the causes for the formation of holes and hillocks. The implications of stresses with respect to adhesion and other practical effects are briefly reviewed.