Direct evidence for atomic defects in graphene layers
Direct evidence for atomic defects in graphene layers
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DOI：
10.1038/nature02817
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发表时间：
2004-08-19
期刊：
影响因子：
64.8
通讯作者：
Iijima, S
中科院分区：
文献类型：
--
作者：
Hashimoto, A;Suenaga, K;Iijima, S
石墨烯层中的原子级缺陷改变了碳纳米结构的物理和化学性质（1，2）。最近的理论预测表明，高能粒子（如电子和离子）可以在石墨烯层中诱导多晶型原子缺陷，这是撞击原子位移的结果（3，4）。然而，关于这些缺陷的实验报告数量有限（5，6）。单壁碳纳米管中的石墨网络已通过透射电子显微镜（TEM）可视化，并已确定其手性指数（7，8）。但是，所使用的方法需要很长的图像采集时间和密集的数值处理后，观察找到一个“平均”的图像，这妨碍了准确的检测和缺陷结构的调查。在这里，我们报告的缺陷形成在单石墨烯层的高分辨率TEM原位观察。所观察到的结构，预计将使用时，工程碳纳米结构的特定设备应用的性能。
Atomic-scale defects in graphene layers alter the physical and chemical properties of carbon nanostructures(1,2). Theoretical predictions have recently shown that energetic particles such as electrons and ions can induce polymorphic atomic defects in graphene layers as a result of knock-on atom displacements(3,4). However, the number of experimental reports on these defects is limited(5,6). The graphite network in single-walled carbon nanotubes has been visualized by transmission electron microscopy (TEM) and their chiral indices have been determined(7,8). But the methods used require a long image acquisition time and intensive numerical treatments after observations to find an 'average' image, which prevents the accurate detection and investigation of defect structures. Here we report observations in situ of defect formation in single graphene layers by high-resolution TEM. The observed structures are expected to be of use when engineering the properties of carbon nanostructures for specific device applications.