Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure
Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure
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DOI：
10.1063/1.1600838
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发表时间：
2003-08-11
影响因子：
4
通讯作者：
Shiraki, Y
中科院分区：
文献类型：
--
作者：
Alguno, A;Usami, N;Shiraki, Y
本文报道了在硅基p-i-n二极管本征区自组装Ge点的叠层太阳电池的性能。这些点是通过气体源分子束外延的Stranski-Krastanov生长模式在p型Si（100）衬底上外延生长的。增强的外量子效率（EQE）在红外区域高达1.45 μ m的太阳能电池与堆叠的自组装Ge点相比，没有Ge点。此外，发现EQE随着堆叠数量的增加而增加。这些结果表明，在Ge点中产生的电子-空穴对可以被内电场有效地分离，并且可以有助于光电流，而不会在Ge点或Ge/Si界面处发生大量复合。(C)2003年，美国物理学会。
We report on the performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode. These dots were epitaxially grown on p-type Si(100) substrate via the Stranski-Krastanov growth mode by gas-source molecular beam epitaxy. Enhanced external quantum efficiency (EQE) in the infrared region up to 1.45 mum was observed for the solar cells with stacked self-assembled Ge dots compared with that without Ge dots. Furthermore, the EQE was found to increase with increasing number of stacking. These results show that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces. (C) 2003 American Institute of Physics.