Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier
Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier
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具有 p 型和加厚最后量子势垒的 AlGaN 基深紫外发光二极管的性能改进
DOI：
10.1109/jphot.2014.2387253
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发表时间：
2015-02-01
影响因子：
2.4
通讯作者：
Kang, Junyong
中科院分区：
文献类型：
--
作者：
Bao, Xianglong;Sun, Pai;Kang, Junyong
为了提高AlGaN基深紫外发光二极管（UV LED）的性能，对具有p型和加厚最后量子势垒（LQB）的AlGaN基深紫外LED的光学和物理特性进行了数值研究。利用半导体器件高级物理模型（APPROCESS）软件对器件的输出功率-电流特性曲线、内量子效率、电致发光强度、能带图、载流子浓度分布以及有源区的辐射复合率进行了研究。结果表明，与传统的深紫外LED相比，采用p型和加厚LQB结构的AlGaN基深紫外LED的性能得到了显著的改善，这主要归因于空穴注入和电子约束的增强。
In order to improve the performance of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs), the optical and physical properties of AlGaN-based deep UV LEDs with a p-type and thickened last quantum barrier (LQB) are studied numerically. The output power-current performance curves, internal quantum efficiency, electroluminescence intensity, energy band diagrams, distributions of carrier concentrations, and the radiative recombination rates in the active region are investigated by Advance Physical Model of Semiconductor Devices (APSYS) software. The results reveal that, compared with the conventional one, the AlGaN-based deep UV LED with a p-type and thickened LQB achieves a remarkable improvement in performance, which is mainly attributed to the enhancement of hole injection and electron confinement.