Preparation of NaSi thin films for the guest free Si clathrate thin films by heat resistance apparatus using NaSi target materials
Preparation of NaSi thin films for the guest free Si clathrate thin films by heat resistance apparatus using NaSi target materials
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利用NaSi靶材耐热装置制备无客体Si笼形薄膜的NaSi薄膜
DOI：
10.1002/pssc.200982755
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
S. Nonomura
中科院分区：
文献类型：
--
作者：
T. Narita;Hiroyuki Ueno;T. Baba;T. Kume;T. Ban;Tamio Iida;Hitoe Habuchi;H. Natsuhara;S. Nonomura
为了制备硅化钠（NaSi）薄膜，将Na蒸发到Si衬底上，并在不暴露于空气的情况下在Ar气氛下对蒸发的Na膜进行退火。在350 °C下退火4小时的条件产生了NaSi的XRD图案特征，表明在Si衬底上形成了NaSi（© 2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）。
In order to make a thin film of sodium silicide (NaSi), Na was evaporated onto a Si substrate, and the evaporated Na film was annealed under Ar atmosphere without exposure to the air. The annealing condition with 350 °C for 4 h yielded the XRD patterns characteristics of NaSi, indicating the formation of the NaSi on the Si substrate (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)