Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates
Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates
复制标题
Si、SOI 和聚 AlN 衬底上 GaN 功率 HEMT 的热阻表征
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
S. Decoutere
中科院分区：
文献类型：
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作者：
A. Magnani;T. Cosnier;N. Amirifar;M. Zhao;Xiangdong Li;K. Geens;S. Decoutere
在这项工作中，我们研究了GaN HEMTs的热行为，主要有三个方面：(I)引入和制造了测试结构；(Ii)随后，这些结构被用来在硅、SOI和多晶AlN(QST®)上进行小功率HEMTs的热表征；(Iii)最后，进行了3D热有限元模拟，并与实验结果进行了验证，然后用来探索衬底减薄的影响。
In this work the thermal behavior of GaN HEMTs is studied with a three-fold contribution: (i) test structures are introduced and manufactured; (ii) subsequently, those are used to perform the thermal characterization of small and power HEMTs on Si, SOI, and poly-AlN (QST®); (iii) finally, 3D thermal FEM simulations are performed and validated with the experimental results, and then used to explore the effects of substrate thinning.