Interface-related thickness dependence of the tunability in BaSrTiO3 thin films
Interface-related thickness dependence of the tunability in BaSrTiO3 thin films
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BaSrTiO3 薄膜可调性与界面相关的厚度依赖性
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
R. Waser
中科院分区：
文献类型：
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作者：
U. Ellerkmann;R. Liedtke;U. Boettger;R. Waser
研究了Ba_（0.7）Sr_（0.3）TiO_3薄膜的可调谐性随厚度的变化规律。电容-电压曲线显示了薄膜厚度在30 ~ 370 nm范围内的可调谐性，并表现出很强的厚度依赖性。这归因于偏压独立的接口容量。界面抑制的膜的介电常数与减少膜厚度的影响越来越大，而大部分的膜的可调谐性保持不变。计算是从一个热力学模型的基础上的Landau-Ginzburg-Devonshire理论导致的偏见独立的接口容量的假设。从测量数据中得到的大量的膜的偏压依赖性是在非常好的协议与理论推导的值。
The thickness dependence of the tunability of Ba0.7Sr0.3TiO3 thin films is investigated. The capacitance–voltage curves, revealing the tunability of the films with thickness from 30 to 370nm, show a strong thickness dependence. This is attributed to a bias-independent interface capacity. The interface suppresses the permittivity of the film with increasing influence for decreasing film thickness, whereas the tunability of the bulk of the film remains constant. Calculations are performed from a thermodynamic model based on the Landau–Ginzburg–Devonshire theory leading to the assumption of the bias-independent interface capacity. The bias dependence of the bulk of the films derived from measurement data are in very good agreement with the theoretically derived values.