Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor
Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor
复制标题
DOI：
10.1002/adfm.200801097
复制
发表时间：
2009-05-22
影响因子：
19
通讯作者：
Park, Cheolmin
中科院分区：
文献类型：
--
作者：
Kang, Seok Ju;Bae, Insung;Park, Cheolmin
开发了一种基于有机薄膜晶体管（OTFT）、以三异丙基甲硅烷基乙炔基并五苯（TIPS-PEN）单晶作为有源层的新型非易失性铁电聚（偏二氟乙烯-三氟乙烯）（P（VDF-TrFE））存储器。底栅OTFT采用薄P(VDF-TrFE)薄膜栅绝缘体制造，其上通过溶剂交换法生长的一维带状TIPS-PEN单晶位于Au源电极和漏电极之间。后热处理优化了 TIPS-PEN 的平坦单晶 ab 平面与具有特征针状结晶片层的多晶 P(VDF-TrFE) 表面之间的界面。因此，该存储器件表现出基本上稳定的源极-漏极电流调制，其开/关比率滞后大于10(3)，这优于具有真空蒸发并五苯层的铁电P(VDF-TrFE) OTFT。通过在栅电极和 P(VDF-TrFE) 薄膜之间加入中间层，在环境条件下还可以实现超过 5 x 10(4) s 的数据保留时间。该器件在环境中保持稳定超过 40 天，无需额外钝化。将 TIPS-PEN 种子溶液沉积在化学微图案化表面上，可以制造 TIPS-PEN 单晶阵列，该阵列可潜在用于铁电 TFT 存储器的集成阵列。
A new type of nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source-drain current modulation with an ON/OFF ratio hysteresis greater than 10(3), which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5 x 10(4) s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric TFT memory.