FT-IR CHARACTERIZATION OF TIN DIOXIDE GAS SENSOR MATERIALS UNDER WORKING-CONDITIONS
FT-IR CHARACTERIZATION OF TIN DIOXIDE GAS SENSOR MATERIALS UNDER WORKING-CONDITIONS
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DOI：
10.1016/0584-8539(94)01216-4
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发表时间：
1995-05-01
影响因子：
4.4
通讯作者：
MAES, G
中科院分区：
文献类型：
--
作者：
LENAERTS, S;ROGGEN, J;MAES, G
在这项工作中，使用FT-IR光谱表征了在空气中存在还原气体和不同的O-2/N-2混合物中，温度从室温到450摄氏度变化的自支撑二氧化锡圆盘。引起二氧化锡上方气体气氛中氧含量变化的每个因素，例如温度变化、表面反应或另一种物质的吸附，都会导致一个宽而强的红外吸收带，上面叠加着离散的弱吸收带。这种广泛的吸收被认为是从天然施主能级，也就是大部分电畴中的氧空位到二氧化锡材料的导带的电子跃迁。对于狭窄的叠加吸收的解释，仍然有两个假设。结果表明，FT-IR光谱是一种非常适合于半导体金属氧化物传感器表征的技术，因为它允许在工作温度下以及在空气中存在还原气体的情况下，原位跟踪传感器材料的体、表面和周围气体气氛中的过程。
In this work self-supporting tin dioxide disks are characterized using FT-IR spectroscopy in the presence of a reducing gas in air, and in different O-2/N-2 mixtures at temperatures varying from room temperature up to 450 degrees C. Every factor inducing a change in the oxygen content of the gas atmosphere above the tin dioxide, as for instance a temperature change, a surface reaction or adsorption of another species, induces a broad, intense IR absorption band with discrete weak bands superimposed on it. This broad absorption is assigned to the electronic transition from a native donor level, the oxygen vacancy in the bulk of the domain, to the conduction band of the tin dioxide material. For the interpretation of the narrow, superimposed absorptions, two hypotheses remain. The results demonstrate that FT-IR spectroscopy is an extremely suitable technique for the characterization of semiconducting metal oxide sensors, since it allows to follow in situ the processes in the bulk, at the surface and in the surrounding gas atmosphere of the sensor material at working temperature as well as in the presence of reducing gases in air.