Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
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基于分级间隙 InGaN/GaN 超晶格的有源区，用于高功率 440 至 470 nm 发光二极管
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
F. Hüe
中科院分区：
文献类型：
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作者：
A. F. Tsatsulnikov;W. Lundin;A. V. Sakharov;E. E. Zavarin;S. O. Usov;A. E. Nikolaev;N. Cherkashin;B. Ya;D. Yu;M. N. Mizerov;H. Park;M. Hÿtch;F. Hüe
研究了基于短周期InGaN/GaN超晶格限制的超薄InGaN量子阱结构的有源区发光二极管结构和光学性质。分析了外量子效率与有源区设计的关系。结果表明，采用InGaN/GaN结构作为限制梯度带隙短周期超晶格可以显著提高量子效率。
The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.